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Magnachip – MDT08N017RH – Single N-channel Trench MOSFET 80V / 0.001.7 Ω / 300A

The MDT08N017RH uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as high power drives of E-Vehicles (E-bike), DC/DC converter and BMS, general purpose applications.

Key performance parameter

 

VDS 80 V
RDS(on), max 0.0017 Ω
ID 300 A
QG 166 nC
Junction temperature max 175 °C

 

 

MDT08N17RH_Preliminary_Datasheet_v0.1_200312

Features and benefits

  • MagnaChip’s MOSFET Technology
  • Very low on-resistance RDS(on)
  • 100% Avalanche / Rg / △VDS Tested

 

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