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Qorvo – 1200V SiC power modules in the E1B package for space-saving designs

1200V SiC Power-Module by QorvoQorvo is now expanding its own SiC portfolio with 1200V SiC power modules! These modules in the E1B package integrate up to 4 SiC FETs in a bridge circuit.

Qorvo’s SiC FETs are based on a SiC JFET and a Si MOSFET in cascode configuration. Detailed information about this innovative approach can be found here.


1200V SiC power modules by Qorvo

1200V SiC Power-Module by QorvoIn the compact E1B form factor of just 33.8mm x 48mm x 12mm (without mounting lugs), Qorvo integrates the four or two SiC FETs in the full/half-bridge modules. The underlying SiC cascode FETs are characterized by very low RDSON values and very low gate charges. The integrated Si MOSFET at the gate simplifies control considerably (VG(th)= 5V typ, 0…15V allowed drive range).

These advantages can be seen in the half-bridge module UHB100SC12E1BC3N due to the very low RDSON of only 9.4mOhm typical.

Another important factor in module technology is heat dissipation. The FETs are thermally connected using silver sintering technology. This enables a thermal resistance of only 0.23°C/W to be realized. Qorvo also combines this with a special “stacked die” technology. The manufacturer achieves an improved power cycling performance by 2x compared to other SiC power modules on the market.

The modules are designed for operation up to a maximum of 150°C TJ. The UHB100SC12E1BC3N delivers up to 100A continuous drain current (TC <85°C) and thus offers the highest current carrying capacity of the family:

Part #

Description

RDS(on) @25C (mΩ)

UFB15C12E1BC3N

1200V, 15A SiC full-bridge module

70

UFB25SC12E1BC3N

1200V, 25A SiC full-bridge module

35

UHB50SC12E1BC3N

1200V, 50A SiC half-bridge module

19

UHB100SC12E1BC3N

1200V, 100A SiC half-bridge module

9.4


Qorvo SiC Ecosystem

Qorvo offers a range of design support tools, application notes and other white papers. The FET-Jet Calculator is the perfect starting point for successful circuit design with Qorvo’s SiC products. Developers can now also use QSPICE, which was developed exclusively for Qorvo. This tool as created by SPICE inventor Mike Engelhardt and is free of charge. You can find detailed information on the benefits in this article. Click here to go to the download page.


Applications for Qorvo 1200V SiC modules

All applications that benefit from efficient and fast switches for modern power supplies are addressed by this new module series.

Whether for charging electric cars, energy storage systems, robust industrial power suppliesor photovoltaic applications – the advantages mentioned above benefit in every scenario.

Our team will be happy to advise you on Qorvo’s SiC products and other components for innovative developments in the field of power supplies: SiC FETs, SJ MOSFETs, MOSFET drivers, power inductors & transformers, AC/DC controllers and much more.

Get in touch with us now. We would be happy to arrange a personal appointment with you for an exchange and technical discussion about your application – also in collaboration with the manufacturer Qorvo:

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