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Bruckewell – CMSG120N013MDG 1200V HPS – IGBT with integrated SiC MOSFET & FRED

Bruckewell - CMSG120N013MDG 1200V HPS

Bruckewell – CMSG120N013MDG 1200V HPS – IGBT + MOSFET & FRED: With the new hybrid power switch (HPS), the Taiwanese manufacturer Bruckewell once again demonstrates its innovative strength and combines the advantages of Si IGBTs with those of fast-switching SiC MOSFETs.

With hybrid power switches (HPS), the low on-resistance of Si IGBTs and the fast switching times of SiC MOSFETs can be combined in such a way that switching losses are significantly reduced compared to standalone IGBTs, without having to consider a costly solution such as a pure SiC MOSFET.

This makes this technology ideal for energy storage and UPS systems, welding equipment, inverters for solar technology, converters for charging solutions for electric vehicles and other high-current applications that require soft switching.

CMSG120N013MDG introduced

Bruckewell has designed the hybrid switch module CMSG120N013MDG for 1200V VCE. The maximum collector current is 260A at 25°C and 130A at 100°C.

At a gate voltage of 15V, the switch-on resistance is only 13.3mOhm at 25°C (14.6mOhm @ 100°C).

Datasheet

The module is designed as a 4-pin type in the SOT-227 housing.

The accessibility of the two gates independently offers the advantage that the switching losses and times can be optimized by switching them on and off delayed to each other.

Bruckewell summarizes the background about HPS in an application note.

This application note goes into the details of performance optimization and profitability calculation.

The IGD8233 – an isolated dual-gate driver – is also presented here. The ideal companion to the CMSG120N013MDG.

HPS Application Note

Bruckewell – CMSG120N013MDG 1200V HPS – IGBT + MOSFET & FRED: Are you looking for an HPS solution? Contact us directly or send us your inquiry here. We will be happy to advise you and get in touch with you immediately.

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