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Power Switching

Dialog Semiconductor
Innovative Design Process Enables Highest Performance Integrated Power Switches

Using a proprietary CuFET™ technique and proprietary MOSFET design, Dialog delivers an elite family of integrated power switches that achieve world class RDSON and highest current carrying capability per square mm.


HFET 1 High-voltage, High-current, Ultra Low RDSON Integrated Power Control Switches

Dialog's family of high-performance integrated power switches include high-voltage capability for all high-side, 4.5 V to 24 V power rail applications up to 6 A. Using a proprietary MOSFET design, this new family of power control switches achieves ultra-stable and low RDSON across a wide input voltage range. Combining proprietary MOSFET IP and advanced assembly techniques, these products are available in very pcb space-efficient footprints and exhibit low thermal resistance for high-current operation. Compared to discrete FETs currently used in high-voltage applications, our HFET 1 products combine high-performance nFET structures, charge pumps, multiple protection, and control circuits into feature-rich products.

For products rated to operate over the industrial (-40 °C to 85 °C) or extended industrial temperature (-40 °C to 125 °C) range, these high-voltage integrated power control switches are available in low thermal resistance, RoHS-compliant packaging or wafer-level chip scale packaging (WLCSP).


GreenFET 3 - Ultra Low RDSON, High-current Integrated Power Switch Family

GFET3 family of high-performance integrated power switches are designed and optimized for all high-side power rail control applications from 0.25 V to 5.5 V where the load currents range from 1 A to 9 A.

Using a proprietary MOSFET design, all GFET3 integrated power switches achieve ultra-stable RDSON across wide input and supply voltage ranges. Combining proprietary MOSFET IP and advanced assembly techniques, these advanced state-of-the-art products are available in ultra-small pcb footprints from 0.56 mm² to 4 mm² and exhibit low thermal resistances for high-current operation.

Compared to discrete FET circuit implementations, GFET3 products combine high-performance nFET or pFET structures, high- current handling capability, charge pumps, as well as multiple protection and control circuits into space-efficient single-and dual-channel products. The combination of all these advanced features directly results in BOM (bill-of-material) component and cost reductions as well as increasing system reliability and reduced board size.

All GFET3 low-voltage integrated power switches are designed and fully characterized over the commercial (0 °C to 70 °C), extended commercial (-20 °C to 70 °C), industrial (-40 °C to 85 °C), or extended industrial (-40 °C to 125 °C) temperature ranges. Consistent with generating very low thermal gradients, Dialog integrated power control switches are available in low thermal resistance, STDFN/STQFN RoHS-compliant packaging or wafer-level chip scale packaging (WLCSP).


GreenFET 1 N-Channel MOSFET Drivers

GreenFET 1 drivers provide the ability to switch Desktop, Notebook, and Netbook power rails ON and OFF in a more efficient and linear manner by facilitating the use of N-channel MOSFETs rather than typical P-channel MOSFETs. GreenFET 1 drivers substantially reduce part count, thereby saving sleep mode power (via reduction in leakage current) and reducing PCB area at cost parity with existing solutions.

GreenFET 1 drivers also provide support for any Intel Reference design load switch for ramp rate or delay. Additionally GreenFET 1 drivers can help your products meet current and future EnergyStar specifications without increasing cost.