CBRAM Technology


Breakthrough Resistive RAM (ReRAM) Technology

Speed and power consumption matter, especially in modern edge computing and AI applications that make up the Internet of Things (IoT). Standard, off the-shelf memory products can’t satisfy these requirements. What’s needed is a breakthrough memory technology that can meet the requirements of the billions of battery-operated devices communicating on the edge of the Internet.

Since 2007, Adesto has led the way in developing resistive RAM technology, and we are recognized in the industry for our strong patent portfolio. We have grown our Conductive Bridging RAM (CBRAM) resistive memory technology from atoms to circuits to products. Our know-how includes a fundamental understanding of the physics, materials and designs required to productize resistive memory, and extensive experience with the ecosystem; from raw materials to finished device manufacturing.

Why ReRAM?

Resistive RAM, in particular Adesto’s CBRAM, offers significant advantages over other non-volatile memory technologies:

  • Speed and power
  • Ideal for embedded NVM
  • In memory computing
  • Tolerant to harsh environments

Significantly Extended Battery Life

Adesto’s CBRAM technology is a breakthrough non-volatile ReRAM memory technology. It consumes significantly less energy than today’s leading memories without sacrificing performance or reliability. This discrete non-volatile memory (NVM) technology can achieve 50-100x lower power in read/write operations compared to competitive solutions.

With CBRAM, designers can extend the battery life of their systems and/or use smaller batteries, or even design systems for battery-free operation through energy harvesting. Since CBRAM can withstand medical sterilization processes, it’s also ideal for smart medical devices.

Performance for Demanding Applications

A notable advantage of CBRAM is that the write operation in its bit-cells is very fast (<1us) compared to standard flash memory technologies (~1ms), and it also does not require a bit to be pre-erased. This makes write operations on CBRAM products 20 times faster than standard flash, while consuming 10 to 100 times less energy.

Tolerant to Harsh Environments

CBRAM is used in a multitude of applications with demanding environments and conditions. Unlike other non-volatile memory technologies, CBRAM provides a robust solution and is well suited for harsh environments.

Test Condition Result
Gamma 200kGy (20M rad) Passed
e-beam 200kGy (20M rad) Passed
Heavy Ion 75 MeV·cm2/mg Passed
High Temp (SMT) 10min @ 260ºC Passed
Magnetic fields ~103 Gauss Passed
UV light 30min @ 12mW/cm2 Passed

A Look Inside CBRAM

Adesto’s CBRAM memory is created by applying fab-friendly, patented metallization and dielectric stack layers between standard CMOS interconnect metal layers. The result is a superior NVM technology that’s easy to embed into standard logic flows.

CBRAM technology relies on the electrochemical making and breaking of a conductive link. This process changes the resistance of the CBRAM storage element which is used to represent data. The conductive link is robust and can withstand high thermal stresses.


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