Microchip`s Innovative Silicon Carbide (SiC) solutions for high power electronic designs through improved system efficiency, smaller form factor and higher operating temperature

 

Microchip covers complete broad range of SiC solutions like Power Discretes ICs (MOSFETs, Schottky Barrier Diodes), Power Modules (MOSFET- / Diode- / Hybrid- Power Modules), Digital programmable Gate Drivers.

 

Silicon Carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency, smaller form factor and higher operating temperature in products covering industrial, transportation/automotive, medical, aerospace/aviation, defense and communication market segments. Microchips next-generation SiC MOSFETs and SiC SBDs are designed with higher repetitive Unclamped Inductive Switching (UIS) capability at rated on-resistance or current. The SiC MOSFETs maintain high UIS capability at approximately 10–25 Joules Per Square Centimeter (J/cm2) and robust short circuit protection. Microchip’s SiC Schottky Barrier Diodes (SBDs) are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, the SiC MOSFET and SiC SBD die can be paired together for use in modules. SiC MOSFET and SiC SBD products from Microchip will be qualified to the AEC-Q101 standard.

SiC is the ideal technology for higher-switching-frequency, higher-efficiency and higher-power (>650 V) applications.

Key Advantages using SiC solutions compared to other technologies

  • SiC Vs. Si only:
    • Lower on-resistance lead to Higher efficiency
    • Faster switching lead to Size reduction
    • Higher junction temperature lead to Improved cooling
    • Higher power density lead to Higher current capabilities
  • SiC MOSFETs Vs. IGBTs
    • IGBT: 100W losses / SiC MOSFET: 30W losses > 70% improvement
    • Lower system costs
    • Extends EV range
  • SiC Vs. GaN
    • Better thermal conductivity means easier to cool
    • High efficiency switching at voltages from 600/650/700 V to over 1700 V
    • Typical gate source voltage range of -5V to +18/20V
    • Stable RDSon across temperature with 25 % to 30% increase
    • Robust Unclamped Inductive Switching (UIS) avalanche rating

Silicon Carbide vs Silicon-only

 

 

 

Target markets and applications include:

  • Industrial—Motor drives, welding, UPS, SMPS, induction heating
  • Transportation/automotive—Electric Vehicle (EV) battery chargers, on board chargers, Hybrid Electric Vehicle (HEV) powertrains, DC-DC converters, energy recovery
  • Smart energy—Photovoltaic (PV) inverters, wind turbines
  • Medical—MRI power supply, X-ray power supply
  • Commercial aviation—Actuation, air conditioning, power distribution
  • Defense—Motor drives, auxiliary power supplies, integrated vehicle systems

 

SiC MOSFET and SiC Schottky Barrier Diode products increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower-cost cooling.

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