Adesto released a new CBRAM® Technology as alternative for serial EEPROM’s

CBRAM is the short form for: Conductive Bridging RAM

  • Adesto’s CBRAM products are the first commercial resistive RAM devices
  • CBRAM forms and dissolves a conductive link between two electrodes
  • Unlike Flash, no pre-erase required
  • Lower energy than Flash
    • Uses lower write voltages
    • Faster write operations

Adesto1

Parts of Adesto’s CBRAM Technology are separated into the Mavriq and Moneta product family.

The main difference between Mavriq and Moneta family is the power consumption.

Current consumption Moneta parts amounts: Read Current: 10 µA, Write Current: 10 µA and Ultra-Deep Power-Down current: 35 nA. Targeted applications are IOT beacons, BLE, Sensor Calibration, Serialized Medical Equipment, Data Logging. Mavriq’s current consumption is: Read Current: 0,25 mA, Write Current: 1,0 mA and Standby current: 1,0 µA.

Key Features of CBRAM:

  • Less than 20% energy consumption compared to EEPROM- array programming
  • Less than 50% energy consumption compared to EEPROM- array read
  • 50x faster byte programming
  • Faster Page write- 5 ms vs 10 ms… and actually faster– CBRAM writes a page in 1 ms
  • Prices lower then EEPROM
  • Markets for CBRAM: Mobile, Consumer, Computing, Industrial, Embedded, Automotive

 

Product Family: MONETA

Moneta is the world lowest power non-volatile memory. With the ability toRead and Write at 50-100x lower power than comparable memory products, Moneta memory is uniquely suited to new, ultra-low energy IoT electronics and enables applications never before possible in energy harvesting and other energy-conscious system designs.

KEY FEATURES MONETA:

  • Ultra-low power/low energy operation extends system battery life
  • Read Current: 10 µA, Write Current: 10 µA, Ultra-Deep Power Down Current: 35 nA
  • 128-byte, One-Time Programmable (OTP) Security Register for authentication and serialization
  • Write protect of the entire memory array
  • Available in SPI protocol

Comparsion between Adesto’s Moneta CBRAM and EEPROM

Parameter

Unit

Adesto Moneta

Industry
E2PROM

Core Supply voltage

Volts

0.97 – 1.03V

NA

I/O Supply voltage

Volts

1.65 – 2.75V

NA

Single Supply Voltage

Volts

NA

1.7-5.5V

Read Power (500Kbit/s)

µW

10

1250

Lowest Power-Down Mode

nW

35

.25

Clock Frequency (Max)

MHz

1

20

Operating Temp Range

°C

-40 to +85

-40 to +85

Write Supply Voltage

Volts

3.6-4.4V

1.7-5.5V

Write Power (10Kbit/s)

µW

7.5

375

Product offering:

Product

Density

Speed

VCC range

Interface

RM3007

256Kbit

1MHZ

1.65V – 2.75V

SPI

RM3005

128Kbit

1MHZ

1.65V – 2.75V

SPI

RM3004

64Kbit

1MHZ

1.65V – 2.75V

SPI

RM3003

32Kbit

1MHZ

1.65V – 2.75V

SPI

 

Product Family: MAVRIQ

Mavriq is industry’s first non-volatile serial memory family based on CBRAM resistive memory technology. Mavriq™ is new memory for the IoT and other energy-conscious applications. With fast programming, low energy write, and low power consumption, Mavriq enables a new class of connected devices.

KEY FEATURES MAVRIQ:

  • Low power/low energy operation extends system battery life
  • Ultra-fast write speeds
  • Single supply voltage: 1.65V – 3.6V or 2.7V – 3.6V
  • Write protect of the entire memory array
  • Available in I2C or SPI protocols (device depending)
  • Download ‚Programmer Support for Serial Memory Devices‘ (below-right) for third-party programming resources. Programmers marked with an asterisk (*) support Mavriq devices.

Comparsion between Adesto’s Mavriq CBRAM and EEPROM

Parameter

Unit

Adesto Mavriq
32-512Kb
1.65 V ,IIC Series

Industry
E2PROM 1.7 V, IIC Series

Operating voltage (min)

V

1.65

1.7

Supply Current- Read

mA

0.25

0.8

Supply Current- Write

mA

1

3

Supply Current (Standby)

µA

1

1

Page Size

byte

32-128 byte

32-128 byte

Byte Write Energy

 J

50nJ

 

Byte Program Time

ms

0.03

5

Page Program Time

ms

0.7-3

5

Operating Temp Range

°C

-40 to +85

-40 to +85

Product offering:

Product

Density

Speed

VCC range

Interface

RM24C32C-L

32Kbit

1MHZ

1.65V – 3.6V

I²C

RM24C64C-L

64Kbit

1MHZ

1.65V – 3.6V

I²C

RM24C128C-L

128Kbit

1MHZ

1.65V – 3.6V

I²C

RM24C256C-L

256Kbit

1MHZ

1.65V – 3.6V

I²C

RM24C512C-L

512Kbit

1MHZ

1.65V – 3.6V

I²C

RM24C32

32Kbit

400KHz

2.7V – 3.6V

I²C

RM24C64

64Kbit

400KHz

2.7V – 3.6V

I²C

RM25C32

32Kbit

5MHz

2.7V – 3.6V

SPI

RM25C64

64Kbit

5MHz

2.7V – 3.6V

SPI

 

CBRAM: Ideal Memory for Battery Operated Wearables

Adesto2

To receive even more information like technical data sheets or price information please contact an Ineltek office within your area or contact us at info@ineltek.com.

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